IRF2907ZS-7PPBF Power Mosfet IC Transistor HEXFET® Power MOSFET
Especificações
Pulsed Drain Current:
700 A
Maximum Power Dissipation:
300 W
Linear Derating Factor:
2.0 W/°C
Gate-to-Source Voltage:
± 20 V
Operating Junction and Storage Temperature:
-55 to + 175°C
Soldering Temperature, for 10 seconds:
300°C (1.6mm from case )
Destaque:
power mosfet ic
,multi emitter transistor
Introdução
Array
Envie o RFQ
Conservado em estoque:
MOQ:
10pcs